21 February 2007 The intermediate size direct detection detector for electron microscopy
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In a longstanding effort to overcome limits of film and the charge coupled device (CCD) systems in electron microscopy, we have developed a radiation-tolerant system that can withstand direct electron bombardment. A prototype Direct Detection Device (DDD) detector based on an Active Pixel Sensor (APS) has delivered unprecedented performance with an excellent signal-to-noise ratio (approximately 5/1 for a single incident electron in the range of 200-400 keV) and a very high spatial resolution. This intermediate size prototype features a 512×550 pixel format of 5&mgr;m pitch. The detector response to uniform beam illumination and to single electron hits is reported. Radiation tolerance with high-energy electron exposure is also impressive, especially with cooling to -15 °C. Stable performance has been demonstrated, even after a total dose of 3.3×106 electrons/pixel. The characteristics of this new detector have exciting implications for transmission electron microscopy, especially for cryo-EM as applied to biological macromolecules.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Liang Jin, Liang Jin, Anna-Clare Milazzo, Anna-Clare Milazzo, Stuart Kleinfelder, Stuart Kleinfelder, Shengdong Li, Shengdong Li, Philippe Leblanc, Philippe Leblanc, Fred Duttweiler, Fred Duttweiler, James C. Bouwer, James C. Bouwer, Steve T. Peltier, Steve T. Peltier, Mark Ellisman, Mark Ellisman, Nguyen-Huu Xuong, Nguyen-Huu Xuong, } "The intermediate size direct detection detector for electron microscopy", Proc. SPIE 6501, Sensors, Cameras, and Systems for Scientific/Industrial Applications VIII, 65010A (21 February 2007); doi: 10.1117/12.704329; https://doi.org/10.1117/12.704329

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