21 February 2007 The intermediate size direct detection detector for electron microscopy
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Abstract
In a longstanding effort to overcome limits of film and the charge coupled device (CCD) systems in electron microscopy, we have developed a radiation-tolerant system that can withstand direct electron bombardment. A prototype Direct Detection Device (DDD) detector based on an Active Pixel Sensor (APS) has delivered unprecedented performance with an excellent signal-to-noise ratio (approximately 5/1 for a single incident electron in the range of 200-400 keV) and a very high spatial resolution. This intermediate size prototype features a 512×550 pixel format of 5&mgr;m pitch. The detector response to uniform beam illumination and to single electron hits is reported. Radiation tolerance with high-energy electron exposure is also impressive, especially with cooling to -15 °C. Stable performance has been demonstrated, even after a total dose of 3.3×106 electrons/pixel. The characteristics of this new detector have exciting implications for transmission electron microscopy, especially for cryo-EM as applied to biological macromolecules.
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Liang Jin, Anna-Clare Milazzo, Stuart Kleinfelder, Shengdong Li, Philippe Leblanc, Fred Duttweiler, James C. Bouwer, Steve T. Peltier, Mark Ellisman, Nguyen-Huu Xuong, "The intermediate size direct detection detector for electron microscopy", Proc. SPIE 6501, Sensors, Cameras, and Systems for Scientific/Industrial Applications VIII, 65010A (21 February 2007); doi: 10.1117/12.704329; https://doi.org/10.1117/12.704329
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