21 February 2007 Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate
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Abstract
In this paper, a new CMOS image sensor is presented, which uses a PMOSFET-type photodetector with a transfer gate that has a high and variable sensitivity. The proposed CMOS image sensor has been fabricated using a 0.35 &mgr;m 2-poly 4- metal standard CMOS technology and is composed of a 256 × 256 array of 7.05 × 7.10 &mgr;m pixels. The unit pixel has a configuration of a pseudo 3-transistor active pixel sensor (APS) with the PMOSFET-type photodetector with a transfer gate, which has a function of conventional 4-transistor APS. The generated photocurrent is controlled by the transfer gate of the PMOSFET-type photodetector. The maximum responsivity of the photodetector is larger than 1.0 × 103 A/W without any optical lens. Fabricated 256 × 256 CMOS image sensor exhibits a good response to low-level illumination as low as 5 lux.
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Sang-Ho Seo, Sang-Ho Seo, Kyoung-Do Kim, Kyoung-Do Kim, Jae-Sung Kong, Jae-Sung Kong, Jang-Kyoo Shin, Jang-Kyoo Shin, Pyung Choi, Pyung Choi, } "Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate", Proc. SPIE 6501, Sensors, Cameras, and Systems for Scientific/Industrial Applications VIII, 650111 (21 February 2007); doi: 10.1117/12.703770; https://doi.org/10.1117/12.703770
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