20 February 2007 CMOS color image sensor with overlaid organic photoconductive layers having narrow absorption band
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Abstract
At EI2006, we proposed the CMOS image sensor, which was overlaid with organic photoconductive layers in order to incorporate in it large light-capturing ability of a color film owing to its multiple-layer structure, and demonstrated the pictures taken by the trial product of the proposed CMOS image sensor overlaid with an organic layer having green sensitivity. In this study, we have tried to get the optimized spectral sensitivity for the proposed CMOS image sensor by means of the simulation to minimize the color difference between the original Macbeth chart and its reproduction with the spectral sensitivity of the sensor as a parameter. As a result, it has been confirmed that the proposed CMOS image sensor with multiple-layer structure possesses high potential capability in terms of imagecapturing efficiency when it is provided with the optimized spectral sensitivity.
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Shunji Takada, Shunji Takada, Mikio Ihama, Mikio Ihama, Masafumi Inuiya, Masafumi Inuiya, Takashi Komatsu, Takashi Komatsu, Takahiro Saito, Takahiro Saito, } "CMOS color image sensor with overlaid organic photoconductive layers having narrow absorption band", Proc. SPIE 6502, Digital Photography III, 650207 (20 February 2007); doi: 10.1117/12.704788; https://doi.org/10.1117/12.704788
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