Flat-panel direct conversion detectors used in compound substance of semiconductor are being studied for digital x-ray imaging. Recently, such detectors are deposited by physical vapor deposition(PVD) generally. But, most of semiconductors (HgI2, PbI2, TlBr, PbO) deposited by PVD method have shown difficult fabrication process and instability for large area x-ray imaging. Consequently, in this paper, we propose applicable potentialities for screen printing method that is coated on a substrate easily. It is compared to electrical properties among semiconductors such as HgI2, PbI2, PbO, CdTe under investigation for direct conversion detectors. Each film detector was coated onto the substrate and Substrates of 2cmx5cm had been used to evaluate performance of semiconductor radiation detectors. Fabricated films consisted of ~25 to 35 μm thick layer of semiconductor. Dark current, sensitivity, linearity, lag, and morphologic property were measured for evaluation of films performance. Dark current of PbO was acquired the lowest, and dark current of HgI2 at the operation voltage of ~1V/μm was observed 8pA/mm2. Sensitivity is observed higher about ten times than the others. And then HgI2 is observed the best SNR in four materials. In four semiconductors, it is shown in good linearity. Such a value is not better than PVD process, but it is easy to be fabricated in high quality for large area X-ray Imaging. Our future efforts will concentrate on optimization of growth of film thickness that is coated onto a-Si TFT array.