EUV lithography program at IMEC

Anne Marie Goethals; Rik Jonckheere; Gian Francesco Lorusso; Jan Hermans; Frieda Van Roey; Alan Myers; Manish Chandhok; Insung Kim; Ardavan Niroomand; Fumio Iwamoto; Nikolay Stepanenko; Roel Gronheid; Bart Baudemprez; Kurt Ronse

doi:10.1117/12.710798

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13 March 2007 EUV lithography program at IMEC

Anne Marie Goethals, Rik Jonckheere, Gian Francesco Lorusso, Jan Hermans, Frieda Van Roey, Alan Myers, Manish Chandhok, Insung Kim, Ardavan Niroomand, Fumio Iwamoto, Nikolay Stepanenko, Roel Gronheid, Bart Baudemprez, Kurt Ronse

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Proceedings Volume 6517, Emerging Lithographic Technologies XI; 651709 (2007) https://doi.org/10.1117/12.710798
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

IMEC has started an EUV lithography research program based on ASMLs EUV full field scanner, the Alpha Demo Tool (ADT). Currently, the ADT is in the final phase of installation. The program focuses on three main projects: EUV resists, EUV reticles and assessment of the ADT performance. The intent of this program is to help improve and establish the necessary mask and resist infrastructure. In this paper, the status and the progress of the program is reviewed. In preparation for a resist process for the ADT, interference lithography has been used to track the progress of resist performance. Steady progress in resist development is seen, especially in terms of resolution, as some materials are now able to resolve 25nm HP. In its initial phase, the reticle project has concentrated on working with the mask and blank suppliers to assure timely availability of reticles for the ADT. An overview is given of the other reticle related activities, as well as first results of a defect printability study by simulation. In the ADT assessment project, simulation studies are reported aimed at the development of optical correction for flare and reticle shadowing effects. The impact of flare and shadowing effects are well understood and strategies for flare mitigation and shadowing effect correction are proposed.

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Anne Marie Goethals, Rik Jonckheere, Gian Francesco Lorusso, Jan Hermans, Frieda Van Roey, Alan Myers, Manish Chandhok, Insung Kim, Ardavan Niroomand, Fumio Iwamoto, Nikolay Stepanenko, Roel Gronheid, Bart Baudemprez, and Kurt Ronse "EUV lithography program at IMEC", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651709 (13 March 2007); https://doi.org/10.1117/12.710798

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