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13 March 2007 Fast simulation of buried EUV mask defect interaction with absorber features
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Abstract
To simulate the interaction of buried defects and absorber features in EUV masks and their effects on projection printing, a prototype 2D, fast, integrated, simulator based on ray tracing and a thin mask model is presented. RADICAL (Rapid Absorber Defect Interaction Computation for Advanced Lithography), consists of three sequential steps: the propagation of the mask illumination down through the absorber pattern, the reflection off the defective multilayer, and the propagation back up through the absorber. A propagated thin mask model is used to model the down/up propagation through the absorber pattern and a ray tracing simulator is used for the multilayer reflection. These simulators are linked together using a Fourier transform to convert the near field output of one component into a set of plane wave inputs for the next. This new method gives a 100x-300x speed increase compared to FDTD, and agrees to a point to point average of less than 2% with FDTD for 22nm lines on the wafer for NA=0.5. The errors in RADICAL and FDTD are examined to determine the sources of error for each simulator.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris H. Clifford and Andrew R. Neureuther "Fast simulation of buried EUV mask defect interaction with absorber features", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170A (13 March 2007); https://doi.org/10.1117/12.711173
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