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29 March 2007 EUV MET printing and actinic imaging analysis on the effects of phase defects on wafer CDs
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Extreme ultraviolet (EUV) lithography technology has gradually developed, and the industry is now progressing toward beta EUV lithography processes. However, very little has been reported on the effects of phase defects on wafer critical dimension (CD) and on tolerable defect sizes. We have fabricated programmed defect masks with programmed substrate pits and absorbing iso line patterns. The substrate pit depth measured with AFM ranged from ~2-3 to ~6-10 nm and the full width half maximum (FWHM) varied from 45 to 150 nm. A line-pattern was etched into the reflective multilayer coating using focused ion beam (FIB) milling. The iso line pattern is 225nm wide, corresponding to 45nm on a wafer in 5x demagnification tool we used for the EUV exposure. In this paper, we will present an analysis of the measured relationship between phase defect size and CD change using data obtained with an EUV micro-exposure tool (MET) and with an actinic imaging microscope at Lawrence Berkeley National Laboratory. Printable distance between pit and line edge will also be discussed according to pit sizes. Comparison result between real test and aerial image simulation will be reported to confirm the simulation.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hakseung Han M.D., Kenneth A. Goldberg, Anton Barty, Eric M. Gullikson, Yoshiaki Ikuta, Toshiyuki Uno, Obert R. Wood, and Stefan Wurm "EUV MET printing and actinic imaging analysis on the effects of phase defects on wafer CDs", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170B (29 March 2007);

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