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19 March 2007 Laser produced EUV light source development for HVM
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We develop a laser produced plasma light source for high volume manufacturing (HVM) EUV lithography. The light source is based on a short pulse, high power, high repetition rate CO2 master oscillator power amplifier (MOPA) laser system and a Tin droplet target. A maximum conversion efficiency of 4.5% was measured for a CO2 laser driven Sn plasma having a narrow spectrum at 13.5 nm. In addition, low debris generation was observed. The CO2 MOPA laser system is based on commercial high power cw CO2 lasers. We achieve an average laser power of 3 kW at 100 kHz with a single laser beam that has very good beam quality. In a first step, a 50-W light source is developing. Based on a 10-kW CO2 laser this light source is scalable to more than 100 W EUV in-band power.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Endo, Hideo Hoshino, Takashi Suganuma, Masato Moriya, Tatsuya Ariga, Yoshifumi Ueno, Masaki Nakano, Takeshi Asayama, Tamotsu Abe, Hiroshi Komori, Georg Soumagne, Hakaru Mizoguchi, Akira Sumitani, and Koichi Toyoda "Laser produced EUV light source development for HVM", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170O (19 March 2007);


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