15 March 2007 Electrostatic chucking of EUVL reticles
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Abstract
Characterizing the effect of electrostatic chucking on the flatness of Extreme Ultraviolet Lithography (EUVL) reticles is necessary for the implementation of EUVL for the sub-32 nm node. In this research, finite element (FE) models have been developed to predict the flatness of reticles when clamped by a bipolar Coulombic pin chuck. Nonflatness measurements of the reticle and chuck surfaces were used to create the model geometry. Chucking was then simulated by applying forces consistent with the pin chuck under consideration. The effect of the nonuniformity of electrostatic forces due to the presence of gaps between the chuck and reticle backside surfaces was also included. The model predictions of the final pattern surface shape of the chucked reticle have been verified with chucking experiments and the results have established the validity of the models. Parametric studies with varying reticle shape, chuck shape, chuck geometry, and chucking pressure performed using FE modeling techniques are extremely useful in the development of SEMI standards for EUVL.
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Madhura Nataraju, Jaewoong Sohn, Andrew R. Mikkelson, Roxann L. Engelstad, Kevin T. Turner, Chris K. Van Peski, Kevin J. Orvek, "Electrostatic chucking of EUVL reticles", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170Y (15 March 2007); doi: 10.1117/12.720621; https://doi.org/10.1117/12.720621
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