29 March 2007 Experimental and simulation investigations of acoustic cavitation in megasonic cleaning
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Extreme ultra-violet (EUV) lithography has become the technique of choice to print the ever-shrinking nanoscale features on the silicon wafer. For successful transfer of patterns on to the wafer, the EUV photomask cannot contain defects greater than 30 nm. Megasonic cleaning is a very successful cleaning technique for removal of particles on photomasks, but also causes a relatively high amount of damage to the fragile EUV photomasks thin film structures. Though it is believed that acoustic cavitation is the primary phenomenon responsible for cleaning as well as pattern damage, a fundamental picture of the acoustic cavitation mechanisms in play during megasonic cleaning has not yet clearly emerged. In this study, we characterize the role of acoustic cavitation in megasonic cleaning by examining the effects of acoustic power densities, cleaning solution properties, and dissolved gas content on cavitation via experiments and molecular dynamics (MD) simulations. MD is an atomistic computation technique capable of modeling atomic-level and nanoscale processes accurately making it well suited to study the effect of cavitation on nano-sized particles and patterns.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Krishna Muralidharan, Krishna Muralidharan, Manish Keswani, Manish Keswani, Hrishikesh Shende, Hrishikesh Shende, Pierre Deymier, Pierre Deymier, Srini Raghavan, Srini Raghavan, Florence Eschbach, Florence Eschbach, Archita Sengupta, Archita Sengupta, } "Experimental and simulation investigations of acoustic cavitation in megasonic cleaning", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65171E (29 March 2007); doi: 10.1117/12.712464; https://doi.org/10.1117/12.712464

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