15 March 2007 Detection signal analysis of actinic inspection of EUV mask blanks using dark-field imaging
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Abstract
The development of defect-free mask blanks including inspection is one of challenges for the implementation of extreme ultraviolet lithography (EUVL). Among others, inspection of multilayer coated mask blanks with no oversight of critical defects is a challenging issue for providing mask blanks with free defects. In this paper, the printability of a small defect located underneath the reflective multilayer is studied, and the possibility of inspection of the defect is investigated using MIRAI proof-of concept (POC) actinic inspection tool with a 26x Schwarzschild optics of numerical aperture (NA) of 0.2. A critical defect giving a troublesome CD change can be detected. And the through focus characteristics in various shape defects are also analyzed.
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Toshihiko Tanaka, Toshihiko Tanaka, Tsuneo Terasawa, Tsuneo Terasawa, Nobuyuki Iriki, Nobuyuki Iriki, Hajime Aoyama, Hajime Aoyama, Toshihisa Tomie, Toshihisa Tomie, } "Detection signal analysis of actinic inspection of EUV mask blanks using dark-field imaging", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65171Y (15 March 2007); doi: 10.1117/12.711263; https://doi.org/10.1117/12.711263
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