Defect mitigation and reduction in EUVL mask blanks

Rajul Randive; Andy Ma; Ira Reiss; Paul Mirkarimi; Eberhard Spiller; Bernd Beier; Toshiyuki Uno; Patrick Kearney; Chan-Uk Jeon

doi:10.1117/12.712103

15 March 2007 Defect mitigation and reduction in EUVL mask blanks

Rajul Randive, Andy Ma, Ira Reiss, Paul Mirkarimi, Eberhard Spiller, Bernd Beier, Toshiyuki Uno, Patrick Kearney, Chan-Uk Jeon

Author Affiliations +

Proceedings Volume 6517, Emerging Lithographic Technologies XI; 651726 (2007) https://doi.org/10.1117/12.712103
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Fabrication of nearly defect-free mask blanks is one of the most significant challenges facing the commercialization of extreme ultraviolet lithography (EUVL). Despite significant advances in our ability to clean substrates, the incoming substrate contributes more defects than the multilayer to the total number of defects on our lowest defect density mask blanks. This is because cleaning processes are ineffective against substrate pits, which dominate the substrate defect distribution. Fortunately, defect mitigation methods have been developed that use a coat-and-etch process to smooth substrate pit and particle defects. We have designed and installed a process module specifically for smoothing substrate pits and particles. This process module has several new features, such as the ability to isolate the etch source during the deposition steps, and should enable cleaner planarizations than those done before. Currently, the greatest challenge for us is to demonstrate that the smoothing process can be rendered clean enough for manufacturing. We will present results on the particles added during planarization and the composition of these particles, which is critical to identifying their origin and eliminating them.

Citation Download Citation

Rajul Randive, Andy Ma, Ira Reiss, Paul Mirkarimi, Eberhard Spiller, Bernd Beier, Toshiyuki Uno, Patrick Kearney, and Chan-Uk Jeon "Defect mitigation and reduction in EUVL mask blanks", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651726 (15 March 2007); https://doi.org/10.1117/12.712103

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available