21 March 2007 Photocurable silicon-based materials for imprinting lithography
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Abstract
Step and flash imprint lithography (SFIL) is low cost, high resolution patterning process and has found its way into a multitude of front end of the line (FEOL) and back end of the line (BEOL) applications. SFIL-R, a reverse tone variant of SFIL, and imprintable dielectrics are examples of such applications, and both require the design of specialized, silicon-based materials. Polyhedral oligomeric silsesquioxane (POSS) liquids were modified through a dual functionalization strategy to introduce photosensitive acrylate and thermally curable benzocyclobutane (BCB) groups to the molecule. The optimal functional group ratio was observed to be 3:5 acrylate to BCB, and the result was an imprintable dielectric with good mechanical properties and minimal post-exposure shrinkage. Thermal gravimetric analysis (TGA) revealed good thermal stability with minimal mass loss under annealing conditions of 400°C for 2 hours. Si-14 was designed to be a non-volatile, etch-resistant planarization layer for SFIL-R application. A polydimethylsiloxane (PDMS) derivative was modified to introduce acrylate functional groups and side branching for photosensitivity and low viscosity, respectively. Characterization of the material showed ideal planarization characteristics - low volatility (0.77 Torr at 25°C), low viscosity (15.1 cP), and minimal post-exposure shrinkage (5.1%).
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Jianjun Hao, Michael W. Lin, Frank Palmieri, Yukio Nishimura, Huang-Lin Chao, Michael D. Stewart, Austin Collins, Kane Jen, C. Grant Willson, "Photocurable silicon-based materials for imprinting lithography", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651729 (21 March 2007); doi: 10.1117/12.712261; https://doi.org/10.1117/12.712261
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