Faster development of products is being increasingly demanded by the growing diversification of the electronics market.
Quickly producing small lots of prototype chips is increasingly required for system LSIs made using leading-edge
semiconductor process technologies, in order to test their functions and performance in actual products. In view of these
trends, maskless lithography can create a development environment to enable cheaper costs and shorter periods. In mass
production, however, lithography using photo-masks is used because of high productivity. Using an exposure
technology different from mass production causes different physical phenomenon in the lithography process, and it
forms different images. In this paper, we describe a data processing method for making each printed image correspond
between lithographic printing systems which are electron beam lithography and photolithography of a different exposure
source. The method has features which are to distinguish differences in the contour data obtained from each lithography
simulation, to modify design data based on the difference information, and to register the design data in a design data
library for electron beam exposure. Moreover, we demonstrated that our data processing system was able to make the
electron beam exposure data obtain the same shape as the shape of resist patterns by photolithography. We report on the
data processing system because we have finished a basic examination of our data processing method.