16 March 2007 CD budget analysis on hole pattern in EUVL
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Proceedings Volume 6517, Emerging Lithographic Technologies XI; 65172K (2007); doi: 10.1117/12.711288
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States
Abstract
In this paper we focus exclusively on hole process. The motivation here is to investigate on the performance of EUVL for hole patterning in relation to contributions from mask, exposure tool, and resist process. In this paper we investigated the patterning characteristics of arrayed, staggered, and isolated holes including features showing trench patterns.
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Nobuyuki Iriki, Hajime Aoyama, Toshihiko Tanaka, "CD budget analysis on hole pattern in EUVL", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65172K (16 March 2007); doi: 10.1117/12.711288; https://doi.org/10.1117/12.711288
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KEYWORDS
Photomasks

Extreme ultraviolet lithography

Critical dimension metrology

Semiconducting wafers

Finite-difference time-domain method

Waveguides

Lithography

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