21 March 2007 Photon sieve array x-ray maskless nanolithography
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Abstract
We present the lithography scheme that use high-numerical-aperture photon sieves array as focusing elements in a scanning X-ray maskless nanolithography system. The system operating at wavelength of 0.5~2nm synchrotron light sources radiated, each of a large array of photon sieves focuses incident X-ray into a diffraction-limited on-axis nanoscale spot on the substrate coated photoresist. The X-ray intensity of each spot is modulated by means of a spatial light modulator. Patterns of arbitrary geometry are exposed and written in a dot matrix fashion while the substrate on a stepping stage is precisely driven in two dimensions according to the computer program. The characteristics of synchrotron radiation light, resolution limits and depth of focus of the lithographic system are discussed. The design and fabrication of photon sieve are illustrated with a low-numerical-aperture amplitude-photon sieve fabricated on a chrome-coated quarts plate by means of laser-beam lithographic process, which minimum size of pinhole was 5.6um. The focusing performance of the photon sieve operating at wavelength of 632.8nm was simulated and tested.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guanxiao Cheng, Guanxiao Cheng, Tingwen Xing, Tingwen Xing, Wumei Lin, Wumei Lin, Jinmei Zhou, Jinmei Zhou, Chuankai Qiu, Chuankai Qiu, Zhijie Liao, Zhijie Liao, Yong Yang, Yong Yang, Lei Hong, Lei Hong, Jianling Ma, Jianling Ma, } "Photon sieve array x-ray maskless nanolithography", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651736 (21 March 2007); doi: 10.1117/12.712547; https://doi.org/10.1117/12.712547
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