Characterization of various Sn targets with respect to debris and fast ion generation

Yoshifumi Ueno; Hideo Hoshino; Tatsuya Ariga; Taisuke Miura; Masaki Nakano; Hiroshi Komori; Georg Soumagne; Akira Endo; Hakaru Mizoguchi; Akira Sumitani; Koichi Toyoda

doi:10.1117/12.711226

21 March 2007 Characterization of various Sn targets with respect to debris and fast ion generation

Yoshifumi Ueno, Hideo Hoshino, Tatsuya Ariga, Taisuke Miura, Masaki Nakano, Hiroshi Komori, Georg Soumagne, Akira Endo, Hakaru Mizoguchi, Akira Sumitani, Koichi Toyoda

Author Affiliations +

Proceedings Volume 6517, Emerging Lithographic Technologies XI; 65173B (2007) https://doi.org/10.1117/12.711226
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

We evaluated Sn debris generated from a CO₂ laser (10.um) and a Nd:YAG laser (1064nm) plasma. Experiments were performed with bulk Sn-plates (t=1mm) and freestanding Sn-foils (t=15um). Quartz Crystal Microbalances (QCM) were used for debris analysis. We observed a drastically lower deposition for the CO₂ laser driven plasma compared with the Nd:YAG laser plasma. In addition, several Sn coated targets with different Sn thickness were investigated for the CO₂ drive laser with respect to the generated plasma debris. In general, a 100nm Sn coated glass target generated more debris than the solid Sn target. Especially, we observed for the Sn-plate target that the deposition rate is smaller than the erosion (sputter) rate caused by the plasma ions.

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Yoshifumi Ueno, Yoshifumi Ueno, Hideo Hoshino, Hideo Hoshino, Tatsuya Ariga, Tatsuya Ariga, Taisuke Miura, Taisuke Miura, Masaki Nakano, Masaki Nakano, Hiroshi Komori, Hiroshi Komori, Georg Soumagne, Georg Soumagne, Akira Endo, Akira Endo, Hakaru Mizoguchi, Hakaru Mizoguchi, Akira Sumitani, Akira Sumitani, Koichi Toyoda, Koichi Toyoda, } "Characterization of various Sn targets with respect to debris and fast ion generation", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65173B (21 March 2007); doi: 10.1117/12.711226; https://doi.org/10.1117/12.711226

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