21 March 2007 Characterization of the tin-doped droplet laser plasma EUVL sources for HVM
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Abstract
Tin-doped droplet target has been integrated with several lasers including high power high repetition rate lasers and demonstrated high conversion efficiencies for all the lasers. This implies the EUV source power is linearly increasing as the laser frequency goes higher. The target exhibit very low out-of-band radiation and debris emission. The drawback of increasing the repetition rate of the target and the laser will be limited. The total amount of tin consumed for a EUVL source system is also small enough to be operated for a long term without large effort for recycling of the target materials. We address and demonstrate in this paper the primary issues associated with long-term high power EUV sources for high volume manufacturing (HVM) using tin-doped droplet target.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazutoshi Takenoshita, Kazutoshi Takenoshita, Simi A. George, Simi A. George, Tobias Schmid, Tobias Schmid, Chiew-Seng Koay, Chiew-Seng Koay, Jose Cunado, Jose Cunado, Robert Bernath, Robert Bernath, Christopher Brown, Christopher Brown, Moza M. Al-Rabban, Moza M. Al-Rabban, William T. Silfvast, William T. Silfvast, Martin C. Richardson, Martin C. Richardson, } "Characterization of the tin-doped droplet laser plasma EUVL sources for HVM", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65173O (21 March 2007); doi: 10.1117/12.713461; https://doi.org/10.1117/12.713461
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