You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
4 April 2007Lithography process control using scatterometry metrology and semi-physical modeling
In this paper, results and analysis are presented from Advanced Micro Devices' (AMD) efforts at calculating lithography
dose and focus parameters using scatterometry metrology and semi-physical CD models. The system takes advantage of
the accurate and precise top and bottom CD data produced by scatterometry to differentiate dose and focus variation. To
build the lithography process model, scatterometry data is generated for each field of a focus-exposure matrix (FEM)
wafer, and the resulting top and bottom CD data is used to fit the parameters of series expansions relating CD to dose
and focus. When new CD data is generated, the models can be inverted to solve for dose and focus independently. Our
methodology employs a flexible modeling and inversion approach in an attempt to make the technique applicable to any
production film stack and any line spacing regime. The quality of the inversion results are highly correlated to the
degree of focus observability present in the system. Our results will show how a series of litho process with varied film
stacks and line/space ratios respond to this technique, and we will report some best practices for a variety of use cases
ranging from equipment characterization to focus monitoring on product.
The alert did not successfully save. Please try again later.
Kevin Lensing, Jason Cain, Amogh Prabhu, Alok Vaid, Robert Chong, Richard Good, Bruno LaFontaine, Oleg Kritsun, "Lithography process control using scatterometry metrology and semi-physical modeling," Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 651804 (4 April 2007); https://doi.org/10.1117/12.711548