4 April 2007 Methodology to set up accurate OPC model using optical CD metrology and atomic force microscopy
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Abstract
For the 90nm node and beyond, smaller Critical Dimension(CD) control budget is required and the ways to control good CD uniformity are needed. Moreover Optical Proximity Correction(OPC) for the sub-90nm node demands more accurate wafer CD data in order to improve accuracy of OPC model. Scanning Electron Microscope (SEM) is the typical method for measuring CD until ArF process. However SEM can give serious attack such as shrinkage of Photo Resist(PR) by burning of weak chemical structure of ArF PR due to high energy electron beam. In fact about 5nm CD narrowing occur when we measure CD by using CD-SEM in ArF photo process. Optical CD Metrology(OCD) and Atomic Force Microscopy(AFM) has been considered to the method for measuring CD without attack of organic materials. Also the OCD and AFM measurement system have the merits of speed, easiness and accurate data. For model-based OPC, the model is generated using CD data of test patterns transferred onto the wafer. In this study we discuss to generate accurate OPC model using OCD and AFM measurement system.
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Yeon-Ah Shim, Yeon-Ah Shim, Jaehyun Kang, Jaehyun Kang, Sang-Uk Lee, Sang-Uk Lee, Jeahee Kim, Jeahee Kim, Keeho Kim, Keeho Kim, } "Methodology to set up accurate OPC model using optical CD metrology and atomic force microscopy", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65180C (4 April 2007); doi: 10.1117/12.711936; https://doi.org/10.1117/12.711936
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