5 April 2007 Blossom overlay metrology implementation
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Improved overlay capability and sampling to control advanced lithography has accelerated the need for compact, multilayer/ mask/field/mark overlay metrology. The Blossom approach minimizes the size of the overlay marks associated with each layer while maximizing the density of marks within the overlay metrology tool's field of view (FOV). Here we describe our progress implementing this approach in 45nm manufacturing.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. P. Ausschnitt, C. P. Ausschnitt, W. Chu, W. Chu, D. Kolor, D. Kolor, J. Morillo, J. Morillo, J. L. Morningstar, J. L. Morningstar, W. Muth, W. Muth, C. Thomison, C. Thomison, R. J. Yerdon, R. J. Yerdon, L. A. Binns, L. A. Binns, P. Dasari, P. Dasari, H. Fink, H. Fink, N. P. Smith, N. P. Smith, G. Ananew, G. Ananew, } "Blossom overlay metrology implementation", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65180G (5 April 2007); doi: 10.1117/12.712669; https://doi.org/10.1117/12.712669


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