5 April 2007 Blossom overlay metrology implementation
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Abstract
Improved overlay capability and sampling to control advanced lithography has accelerated the need for compact, multilayer/ mask/field/mark overlay metrology. The Blossom approach minimizes the size of the overlay marks associated with each layer while maximizing the density of marks within the overlay metrology tool's field of view (FOV). Here we describe our progress implementing this approach in 45nm manufacturing.
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C. P. Ausschnitt, W. Chu, D. Kolor, J. Morillo, J. L. Morningstar, W. Muth, C. Thomison, R. J. Yerdon, L. A. Binns, P. Dasari, H. Fink, N. P. Smith, G. Ananew, "Blossom overlay metrology implementation", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65180G (5 April 2007); doi: 10.1117/12.712669; https://doi.org/10.1117/12.712669
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