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5 April 2007 Evaluation of CD-SEM measurement uncertainty using secondary electron simulation with charging effect
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In recent year, CD metrology is required not only precision but also accuracy for more accurate CD control. CD bias between CD-SEM and a reference tool is the most important factor for more accurate CD measurement. CD bias varies by many CD-SEM and pattern condition. Then, CD bias variation caused by CD-SEM should be evaluated in detail. However, it is difficult to estimate these factors dependence on CD bias variation experimentally. Then, we develop an electron beam simulator with charging effects. We evaluated the mechanism of CD bias variation using electron beam simulator and CD-SEM data. As the results, CD bias variation is caused by changing of secondary electron signal which depends on space width. There are several different points between the experimental results and the simulation results in grayscale line profiles. Simulation data can be more similar to experimental data with charging effects and the actual experimental conditions. Simulation has enough capability to estimate CD bias variation with the simple structure and non-charging calculation. And mechanism of space width dependence on CD bias can be analyzed by using electron beam simulator.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideaki Abe, Akira Hamaguchi, and Yuichiro Yamazaki "Evaluation of CD-SEM measurement uncertainty using secondary electron simulation with charging effect", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65180L (5 April 2007);

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