Characterization of capacitive 3D deep trench mask open structures using scatterometry

Shahin Zangooie; Pedro Herrera; Abebe Mesfin; Chas Archie; Matthew Sendelbach

doi:10.1117/12.712763

5 April 2007 Characterization of capacitive 3D deep trench mask open structures using scatterometry

Shahin Zangooie, Pedro Herrera, Abebe Mesfin, Chas Archie, Matthew Sendelbach

Author Affiliations +

Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 651827 (2007) https://doi.org/10.1117/12.712763
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

A non-destructive and fast optical solution for characterization of 3D deep trench mask open structures containing two holes per unit cell is presented. It is discussed that measurement sensitivity depends on wafer orientation. A weighted reference measurement system using data from scatterometry combined with CD-SEM and CD-AFM techniques after HF removal of the top BSG layer demonstrates adequate performance of scatterometry for high aspect ratio 3D process control implementations. For example the BCD major and minor axis scatterometry total measurement uncertainty values are about a factor 2 better than the corresponding results obtained using CD-SEM and CD-AFM. While scatterometry data exhibit close to unity slope for both TCD and BCD, corresponding CD-SEM and CD-AFM performances show significantly stronger dependence on depth. Hence, Scatterometry sensitivity to CD variation is less depth sensitive which is a preferred high volume manufacturing property.

Citation Download Citation

Shahin Zangooie, Shahin Zangooie, Pedro Herrera, Pedro Herrera, Abebe Mesfin, Abebe Mesfin, Chas Archie, Chas Archie, Matthew Sendelbach, Matthew Sendelbach, } "Characterization of capacitive 3D deep trench mask open structures using scatterometry", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 651827 (5 April 2007); doi: 10.1117/12.712763; https://doi.org/10.1117/12.712763

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