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5 April 2007Characterization of capacitive 3D deep trench mask open structures using scatterometry
A non-destructive and fast optical solution for characterization of 3D deep trench mask open structures containing
two holes per unit cell is presented. It is discussed that measurement sensitivity depends on wafer orientation. A
weighted reference measurement system using data from scatterometry combined with CD-SEM and CD-AFM
techniques after HF removal of the top BSG layer demonstrates adequate performance of scatterometry for high
aspect ratio 3D process control implementations. For example the BCD major and minor axis scatterometry total
measurement uncertainty values are about a factor 2 better than the corresponding results obtained using CD-SEM
and CD-AFM. While scatterometry data exhibit close to unity slope for both TCD and BCD, corresponding CD-SEM
and CD-AFM performances show significantly stronger dependence on depth. Hence, Scatterometry
sensitivity to CD variation is less depth sensitive which is a preferred high volume manufacturing property.
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Shahin Zangooie, Pedro Herrera, Abebe Mesfin, Chas Archie, Matthew Sendelbach, "Characterization of capacitive 3D deep trench mask open structures using scatterometry," Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 651827 (5 April 2007); https://doi.org/10.1117/12.712763