5 April 2007 Immersion-induced defect SEM-based library for fast baseline improvement and excursion
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Abstract
Immersion lithography offers great benefit for advanced technology nodes but at the same time poses a great challenge. Along with hyper NA values, which increase the scanner resolution, new types of imaging process related defects emerge. These new defects are related to water, top coating, resist and BARC in the litho process. Root cause analysis of the so-called wet defects (immersion) versus the so-called dry defects (non immersion-related) becomes crucial in any immersion lithography related defect reduction program. Manual and eventually automated classification of defects can be used to analyze the data and monitor baselines. Furthermore, a robust Automatic Defect Classification (ADC) increases productivity and decreases the wafer cycle time. This article outlines a methodological approach for wet and dry defect classification that employs rule-based ADC and enables the generation of an immersion induced defect library for fast baseline improvement and excursion monitoring. The work described in this article has been performed at ASML using Applied Materials' SEMVision G3 FIB automated defect review and analysis tool.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ilan Englard, Ilan Englard, Raf Stegen, Raf Stegen, Erik Van Brederode, Erik Van Brederode, Peter Vanoppen, Peter Vanoppen, Ingrid Minnaert-Janssen, Ingrid Minnaert-Janssen, Frank Duray, Frank Duray, Ted der Kinderen, Ted der Kinderen, Gazi Tanriseven, Gazi Tanriseven, Inge Lamers, Inge Lamers, Mireia Blanco Mantecon, Mireia Blanco Mantecon, Lior Levin, Lior Levin, Eitan Binyamini, Eitan Binyamini, Nurit Raccah, Nurit Raccah, Shalev Dror, Shalev Dror, Eran Valfer, Eran Valfer, Ofer Rotlevi, Ofer Rotlevi, Robert Schreutelkamp, Robert Schreutelkamp, Rich Piech, Rich Piech, } "Immersion-induced defect SEM-based library for fast baseline improvement and excursion", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65182G (5 April 2007); doi: 10.1117/12.713466; https://doi.org/10.1117/12.713466
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