5 April 2007 Novel technology of automatic macro inspection for 32-nm node and best focus detection
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Abstract
As the semiconductor design rules shrink down, process margins are getting narrower, and thus, it is getting more important than ever to monitor pattern profile and detect minor structure variation. A breakthrough technology has been introduced as a solution to this concern. The new technology converts the fluctuation of polarization ingredient, which is caused by form birefringence, into light intensity variations as an optical image. This technology, which is called Pattern Edge Roughness (PER) inspection mode, is proved to be effective for 55nm production process. We also studied the possibility of the macro inspection method for half pitch 32nm technology node through FDTD method.
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Kazuhiko Fukazawa, Kazumasa Endo, Kiminori Yoshino, Yuichiro Yamazaki, "Novel technology of automatic macro inspection for 32-nm node and best focus detection", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65182H (5 April 2007); doi: 10.1117/12.711410; https://doi.org/10.1117/12.711410
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