6 April 2007 Stochastic simulation of material and process effects on the patterning of complex layouts
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Abstract
The whole process of stochastic lithography simulation combined with an electron-beam simulation module, could be useful in the validation of design rules taking into account fine details such as line-edge roughness, and for simulating the layout before actual fabrication for design inconsistencies. Material and process parameters can no more be considered of second order importance in high-density designs. Line-width roughness quantification should accompany CD measurements since it could be a large fraction of the total CD budget. An example of the effects of exposure, material and processes on layouts are presented in this work using a combination of electron beam simulation for the exposure part, stochastic simulations for the modeling of resist film, the post-exposure bake, resist dissolution, and a simple analytic model for resist etching. Particular examples of line-width roughness and critical dimension non-uniformity due to, material, and process effects on the gate of a standard CMOS inverter layout are presented.
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N. Tsikrikas, D. Drygiannakis, G. P. Patsis, G. Kokkoris, I. Raptis, E. Gogolides, "Stochastic simulation of material and process effects on the patterning of complex layouts", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 651836 (6 April 2007); doi: 10.1117/12.708858; https://doi.org/10.1117/12.708858
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