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5 April 2007 Robust sub-50-nm CD control by a fast-goniometric scatterometry technique
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Sub-50 nm half pitch critical dimension metrology of resist lines by a fast goniometric scatterometry technique in the visible range has been investigated. The goniometric optical instrumentation allows illumination and reflection of patterned objects from almost all angles of view (0°/80° polar angles, and 0°/360° azimuthal angles) simultaneously. Applied to scatterometry, this tomography-like technique ensures a robust lines profiles reconstruction. Sensitivity and correlation analysis show that this technique exhibits at least equal performances compared to ellipsometry. Since the technique uses a single wavelength, no spurious assumptions about the refractive index of the materials illuminated is introduced is the modeling process. So the technique is believed to be more robust than ellipsometry. We present a demonstration of CD measurement with this technique on 30 nm CD resist lines with various pitches. The results are compared to CDSEM.
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Jérôme Hazart, Pierre Barritault, Stéphanie Garcia, Thierry Leroux, Pierre Boher, and Koichi Tsujino "Robust sub-50-nm CD control by a fast-goniometric scatterometry technique", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65183A (5 April 2007);

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