As Moore's Law indicates, pattern feature sizes have become smaller and smaller, increasing the need for more critical
metrology and inspection methodologies in integrated circuit fabrication. Critical methodologies are especially required
in the inspection area where more critical defect definition methods are needed for the accurate evaluation of inspection
In traditional defect definition, we have to use only normal CD measurement results with manual measurement methods.
This one dimensional definition method gives only defect size information which is not enough information to do
accurate evaluation. In addition, there is a lot of measurement uncertainty such as human errors, measurement errors,
and systematic errors which are included in the data of manual measurement methods. Because of these mentioned
issues, evaluation results will differ from person to person and other environmental influences.
In this paper, the defects will be defined not only with one dimensional measurement but also with two dimensional
measurements using such functions as Gap measurement and EPE (Edge Placement Error) measurement in
DesignGauge using Design Data. For example, misplacement defects in which a pattern is shifted on the wafer as
shown in figure 1 below; traditional one dimension measurement methods can not detect this type of defect. However,
with DesignGauge, misplacement defects can easily be detected if the Design Data is used as shown in figure 2. EPE
measurement method, which is one of the advanced features of DesignGauge, will accurately define misplacement
As the trends of smaller feature sizes in integrated circuit fabrication continues, various defects should be controlled and
measured with advanced defect definition methods using Design Data.