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5 April 2007 Study of ADI (After Develop Inspection) on photo resist wafers using electron beam (II)
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We have clarified that the low-damage, high-resolution defect inspection of the photo resist patterns is ensured by the electron-beam defect inspection equipment for 32-nm generation and beyond. It has first been confirmed that the CD variations on the 65-nm width line structure formed on an ArF resist under general inspection conditions are equal to or less than the CD variations due to a general CD-SEM. We have also succeeded in understanding the resist deterioration mechanism when the ArF resist is exposed to e-beams. This understanding has led us to learn that the layer that, located in the vicinity of the resist surface, is deteriorated by e-beams has its etching rate lowered to cause even improvement on the etching resistance. These findings have enabled us to use inspection conditions that cause lower damage to resists. By using those conditions, we have been able to inspect ArF resist line-space structure wafers with line width of 65nm and pitch width of 140nm. The inspection successfully detected 15 to 20nm programmed extrusion defects with a capture rate of at least 95% and a nuisance rate of 5% or less. It has thus been revealed that e-beam defect inspection equipment are useful for inspecting defects on resist wafers with 32-nm generation and beyond.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Teruyuki Hayashi, Misako Saito, Kaoru Fujihara, Setsuko Shibuya, Y. Kudou, Hiroshi Nagaike, Joseph Lin, and Jack Jau "Study of ADI (After Develop Inspection) on photo resist wafers using electron beam (II)", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184C (5 April 2007);

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