13 April 2007 Köhler illumination analysis for high-resolution optical metrology using 193 nm light
Author Affiliations +
Dependence of Köhler factor 2 (KF 2: angular homogeneity) and Köhler factor 3 (KF 3: wavefront homogeneity) on the intensity profile of line target was investigated for an optical system designed for high-resolution optical metrology using ArF excimer laser of a wavelength of 193 nm. The intensity profiles for the isolated and multiple lines of 60 nm linewidth were simulated based on the diffraction propagation by introducing the changes of NA (KF 2) and aberrations such as defocus and coma (KF 3) to the illumination beam. From the results it was demonstrated that the intensity profiles for the line targets were influenced by the change of the illumination condition, being distorted in shape and magnitude.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yeungjoon Sohn, Yeungjoon Sohn, Richard M. Silver, Richard M. Silver, } "Köhler illumination analysis for high-resolution optical metrology using 193 nm light", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184V (13 April 2007); doi: 10.1117/12.714890; https://doi.org/10.1117/12.714890


Optical design of the VLT/MUSE instrument
Proceedings of SPIE (September 21 2011)
Aerial image based lens metrology for wafer steppers
Proceedings of SPIE (March 15 2006)
A Coaxial Interferometer With Low Mapping Distortion
Proceedings of SPIE (December 15 1978)
Optical Design Considerations For Acousto-Optic Systems
Proceedings of SPIE (August 22 1988)
Extending the lateral trapping force of optical tweezers
Proceedings of SPIE (September 05 2007)
Misalignment modes in high-performance optical systems
Proceedings of SPIE (August 27 1999)
Inclusion of energetic features in wavefront descriptions
Proceedings of SPIE (October 24 2000)

Back to Top