Critical dimension: MEMS road map

Marc Poulingue; Paul Knutrud

doi:10.1117/12.716690

5 April 2007 Critical dimension: MEMS road map

Marc Poulingue, Paul Knutrud

Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 65184W (2007) https://doi.org/10.1117/12.716690
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

The use of Micro-Electro-Mechanical Systems (MEMS) technology in mechanical, biotechnology, optical, communications, and ink jet is growing. Critical dimensions in MEMS devices are getting smaller and processes are constantly facing new metrology challenges. This paper will examine some critical dimension metrology needs and challenges for MEMS using resist-on-silicon structures. It is shown that the use of automated optical CD metrology can meet emerging measurement requirements while bringing the advantages of a non-destructive, high throughput and precise methodology.

Citation Download Citation

Marc Poulingue and Paul Knutrud "Critical dimension: MEMS road map", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184W (5 April 2007); https://doi.org/10.1117/12.716690

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