23 March 2007 Hybrid optical: electron-beam resists
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Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 65190H (2007); doi: 10.1117/12.714370
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States
Abstract
Combining optical and electron beam exposures on the same wafer level is an attractive approach for extending the usefulness of current generation optical tools. This technique requires high-performance hybrid resists that perform equally well with optical and e-beam tools. In this paper Rohm and Haas EPICTM 2340, a 193-nm chemically amplified photoresist, is used in a hybrid exposure role. The e-beam tool was used to pattern 45 nm half-pitch features and a 193- nm immersion stepper was used to pattern 60-nm half-pitch features in the same resist layer. The effects of processing parameters and delay times were investigated.
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D. M. Lennon, S. J. Spector, T. H. Fedynyshyn, T. M. Lyszczarz, M. Rothschild, J. Thackeray, K. Spear-Alfonso, "Hybrid optical: electron-beam resists", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65190H (23 March 2007); doi: 10.1117/12.714370; https://doi.org/10.1117/12.714370
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KEYWORDS
Semiconducting wafers

Wafer-level optics

Electron beam lithography

Polymethylmethacrylate

Hybrid optics

Photoresist processing

Chemically amplified resists

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