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23 March 2007 Novel anionic photoacid generator (PAGs) and photoresist for sub-50-nm patterning by EUVL and EBL
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Abstract
A new series of anionic photoacid generators (PAGs), and corresponding polymers were prepared. The thermostability of PAG bound polymers was superior to PAG blend polymers. PAG incorporated into the polymer main chain showed improved resolution when compared with the PAG blend polymers. This was demonstrated by Extreme Ultraviolet lithography (EUVL) results: the fluorine PAG bound polymer resist gave 45 nm (1:1), 35 nm (1:2), 30 nm (1:3) and 20 nm (1:4) Line/Space as well as the 50 nm (1:1),30 nm (1:2) elbow patterns.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mingxing Wang, Cheng-Tsung Lee, Clifford L. Henderson, Wang Yueh, Jeanette M. Roberts, and Kenneth E. Gonsalves "Novel anionic photoacid generator (PAGs) and photoresist for sub-50-nm patterning by EUVL and EBL", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65191F (23 March 2007); https://doi.org/10.1117/12.712143
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