Translator Disclaimer
21 March 2007 Self-aligned self-assembled organosilicate line patterns of ~20nm half-pitch from block-copolymer mediated self assembly
Author Affiliations +
Abstract
We report the formation of robust organosilicate line patterns of ~20nm half-pitch on surfaces from the self-assembled lamellar phase of a diblock copolymer of polystyrene and poly(ethylene oxide), PS-b-PEO, and an oligomeric organosilicate precursor mixtures. We could control the orientation and alignment of microdomains of this hybrid to the same degree of the thin films of organic block copolymers. By controlling the surface energy of substrates using dense organosilicate, the perpendicular orientation of lamellae to the surface was achieved. Topographic prepatterns were generated by E-beam lithography and used for alignment of the line patterns from lamellar phase. Upon removing the organic component (i.e. PS-b-PEO) by thermal treatment, the organosilicate microdomains remain as periodic line patterns with global alignment on surfaces. This method gives well-aligned silicon-containing line patterns with sublithographic length scales on surface. The self-assembled organosilicate line patterns were successfully transferred into underlying silicon substrate using anisotropic plasma etching.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ho-Cheol Kim, Joy Cheng, Charles Rettner, Oun-Ho Park, Robert Miller, Mark Hart, Linnea Sundström, and Ying Zhang "Self-aligned self-assembled organosilicate line patterns of ~20nm half-pitch from block-copolymer mediated self assembly", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65191H (21 March 2007); https://doi.org/10.1117/12.711687
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top