Initial process evaluation for next generation immersion technology node

Tadatoshi Tomita; Kathleen Nafus; Shinichi Hatakeyama; Hitoshi Kosugi; Masashi Enomoto; Shin Inoue; Kirsten Ruck; Heiko Weichert; Mireia Blanco Mantecon; Raf Stegen; Casper de Groot; Richard Moerman

doi:10.1117/12.712206

23 March 2007 Initial process evaluation for next generation immersion technology node

Tadatoshi Tomita, Kathleen Nafus, Shinichi Hatakeyama, Hitoshi Kosugi, Masashi Enomoto, Shin Inoue, Kirsten Ruck, Heiko Weichert, Mireia Blanco Mantecon, Raf Stegen, Casper de Groot, Richard Moerman

Author Affiliations +

Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 65192B (2007) https://doi.org/10.1117/12.712206
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

In order to prepare for the next generation technology manufacturing, ASML and TEL are working together to investigate the process performance of the LITHIUSi+/ TWINSCAN XT:1700i lithocluster through decreasing critical dimension patterning. In this evaluation, process performance with regards to critical dimension uniformity and defectivity are compared at different critical dimensions in order to determine areas of concentration for equipment and process development. Specifically, design of experiments were run using immersion rinse processing at 60nm hp and 45nm hp. Defects were classified to generate a pareto for each technology node to see if there is any change in the defect types as critical dimensions are shrinking. Similarly, critical dimension uniformity was compared through technology nodes to see if any budget contributions have increased sensitivities to the smaller patterning features. Preliminary gauge studies were performed for the 45nm hp evaluation, as metrology at this design rule is not yet fully proven. More work is necessary to obtain complete understanding of metrology capabilities as this is crucial to discern precise knowledge of processing results. While preliminary results show no adverse impact moving forward, this work is a first screening of 45nm immersion processing and more work is needed to fully characterize and optimize the process to enable robust manufacturing at 45nm hp.

Citation Download Citation

Tadatoshi Tomita, Kathleen Nafus, Shinichi Hatakeyama, Hitoshi Kosugi, Masashi Enomoto, Shin Inoue, Kirsten Ruck, Heiko Weichert, Mireia Blanco Mantecon, Raf Stegen, Casper de Groot, and Richard Moerman "Initial process evaluation for next generation immersion technology node", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65192B (23 March 2007); https://doi.org/10.1117/12.712206

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
10 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Semiconducting wafers

Bridges

Molecular bridges

Diffractive optical elements

Manufacturing

Metrology

Image processing

Show All Keywords

Keywords/Phrases

Search In:

Publication Years