Paper
23 March 2007 Single component chemically-amplified resist based on dehalogenation of polymer
Author Affiliations +
Abstract
For chemically amplified resists which generally consists of a polymer and an acid generator, the homogeneity of resist materials is a serious issue. The incorporation of acid generators into polymers via covalent bonds has attracted much attention because it removes the compatibility problem of acid generators with polymers. In this study, we designed a single-component chemically amplified resist, taking advantage of the difference of reaction mechanisms between electron beam and photoresists. The designed resist has a hydroxyl group as a proton source and halogen atoms as an anion source for acid generation. The developed resist showed an excellent performance.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroki Yamamoto, Takahiro Kozawa, Seiichi Tagawa, Katsumi Ohmori, Mitsuru Sato, and Hiroji Komano "Single component chemically-amplified resist based on dehalogenation of polymer", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65192G (23 March 2007); https://doi.org/10.1117/12.711656
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Cited by 1 scholarly publication.
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KEYWORDS
Polymers

Chemically amplified resists

Ionizing radiation

Photoresist materials

Silicon

Electron beams

Scanning electron microscopy

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