2 April 2007 Nonchemically amplified resists for deep-UV lithography
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Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 65192J (2007); doi: 10.1117/12.712113
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States
Abstract
A novel monomer containing a diazoketo functional group was designed and synthesized. Polymers were synthesized using the diazoketo-functionalized monomer and their physical properties were evaluated. The polymers were synthesized by radical copolymerization of cholic acid 3-diazo-3-ethoxycarbonyl-2-oxo-propyl ester methacrylate, methyl methacrylate, and γ-butyrolacton-2-yl methacrylate. These polymers showed 0.7 &mgr;m line and space patterns using a mercury-xenon lamp in a contact printing mode.
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Ramakrishnan Ganesan, Sumin Kim, Seul Ki Youn, Youngook Cho, Jei-Moon Yun, Jin-Baek Kim, "Nonchemically amplified resists for deep-UV lithography", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65192J (2 April 2007); doi: 10.1117/12.712113; https://doi.org/10.1117/12.712113
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KEYWORDS
Polymers

Lithography

Resistance

Ultraviolet radiation

Deep ultraviolet

Etching

Absorbance

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