2 April 2007 PAG distribution and acid thermal diffusion study in ultra-thick chemically amplified resist films
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Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 65192M (2007); doi: 10.1117/12.711621
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States
Abstract
The introduction of chemically amplified (CA) resist technology to thick films, 10 to 100 um in thickness introduced a number of behavior differences not experienced in thinner films to the same magnitudes. Resist image profile deformation, insensitivity to standing waves and the reduction in polymer deblocking temperatures are significantly affected in thick films to a larger extend than in thinner films. The major contributing factors to these differences are discussed in this paper: 1) the influence of photo-acid generator (PAG) structure on its distribution in resist depth on Cu substrates and 2) thermal acid diffusion, influenced by greater amounts of retained solvents in thick films than in thinner films.
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Medhat Toukhy, Margareta Paunescu, Chunwei Chen, Georg Pawlowski, "PAG distribution and acid thermal diffusion study in ultra-thick chemically amplified resist films", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65192M (2 April 2007); doi: 10.1117/12.711621; https://doi.org/10.1117/12.711621
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KEYWORDS
Copper

Diffusion

Semiconducting wafers

Silicon

Coating

Polymers

Chemically amplified resists

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