Spin-on Organic Hardmask Materials in 70nm Devices

Chang-Il Oh; Dong-Seon Uh; Do-Hyeon Kim; Jin-Kuk Lee; Hui-Chan Yun; Irina Nam; Min-Soo Kim; Kyong-Ho Yoon; Kyung-Hee Hyung; Nataliya Tokareva; Hwan-Sung Cheon; Jong-Seob Kim; Tu-Won Chang

doi:10.1117/12.711720

2 April 2007 Spin-on organic hardmask materials in 70nm devices

Chang-Il Oh, Dong-Seon Uh, Do-Hyeon Kim, Jin-Kuk Lee, Hui-Chan Yun, Irina Nam, Min-Soo Kim, Kyong-Ho Yoon, Kyung-Hee Hyung, Nataliya Tokareva, Hwan-Sung Cheon, Jong-Seob Kim, Tu-Won Chang

Author Affiliations +

Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 65192R (2007) https://doi.org/10.1117/12.711720
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

In ArF lithography for < 90nm L/S, amorphous carbon layer (ACL) deposition becomes inevitable process because thin ArF resist itself can not provide suitable etch selectivity to sub-layers. One of the problems of ACL hardmask is surface particles which are more problematic in mass production. Limited capacity, high cost-of-ownership, and low process efficiency also make ACL hardmask a dilemma which can not be ignored by device makers. One of the answers to these problems is using a spin-on organic hardmask material instead of ACL hardmask. Therefore, several processes including bi-layer resist process (BLR), tri-layer resist process (TLR), and multi-layer resist process (MLR) have been investigated. In this paper, we have described spin-on organic hardmask materials applicable to 70nm memory devices. Applications to tri-layer resist process (TLR) were investigated in terms of photo property, etch property and process compatibility. Based on the test results described in this paper, our spin-on hardmask materials are expected to be used in mass production.

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Chang-Il Oh, Dong-Seon Uh, Do-Hyeon Kim, Jin-Kuk Lee, Hui-Chan Yun, Irina Nam, Min-Soo Kim, Kyong-Ho Yoon, Kyung-Hee Hyung, Nataliya Tokareva, Hwan-Sung Cheon, Jong-Seob Kim, and Tu-Won Chang "Spin-on organic hardmask materials in 70nm devices", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65192R (2 April 2007); https://doi.org/10.1117/12.711720

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