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23 March 2007 Thin bilayer resists for 193-nm and future photolithography II
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Abstract
Bilayer, Si-containing resists are a technique of interest and a strong candidate to replace chemical vapor deposition (CVD) hardmask processes for small critical dimensions (CDs). Previously, we proposed a very thin film approach using bilayer resists for future lithography, defined the requirements for the resists, and demonstrated 55nm transferred patterns with high aspect ratios using 2-beam interferometer exposure. In this paper, we have demonstrated smaller-than- 60nm transferred patterns with a high numerical aperture (NA) scanner, as well as 45nm and 40nm transferred patterns with a 2-beam system using a 20% Si-containing thin bilayer resist. Immersion scanner exposure and a 35nm CD with 2- beam system were also studied.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshi Hishiro and Michael Hyatt "Thin bilayer resists for 193-nm and future photolithography II", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651935 (23 March 2007); https://doi.org/10.1117/12.712737
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