23 March 2007 Radiation sensitive developable bottom anti-reflective coatings (DBARC) for 193nm lithography: first generation
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Abstract
A first generation DBARC applicable for 1st minimum 193nm lithography is described in this paper. The polymer used in this DBARC is insoluble in the casting solvent of the resist, which is propyleneglycolmonomethyletheracetate (PGMEA). Photo acid generator (PAG) and base extractions from the DBARC coating by the resist casting solvent were examined by the DBARC dissolution rates in the developer, before and after solvent treatments. Although the resist and the DBARC do not appear to intermix, strong interaction between the two is evident by their lithographic performance and dissolution rate study.
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Medhat Toukhy, Medhat Toukhy, Joseph Oberlander, Joseph Oberlander, Salem Mullen, Salem Mullen, PingHung Lu, PingHung Lu, Mark Neisser, Mark Neisser, } "Radiation sensitive developable bottom anti-reflective coatings (DBARC) for 193nm lithography: first generation", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651936 (23 March 2007); doi: 10.1117/12.717114; https://doi.org/10.1117/12.717114
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