21 March 2007 Proximity effect correction for the chemical shrink process of different type contact holes
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Small contact hole patterning had become the most difficult task in optical lithography as design rule of semiconductor continuously shrinks below 65nm. Conventional contact hole scheme need to avoid side-lobe and conduct complicated dense-isolated bias for resolution enhancement and depth of focus (DOF) improvement. To overcome this issue, some RETs (Resolution Enhancement Techniques) by process had been investigated, like RELACS (resolution enhancement lithography assisted by chemical shrink). RELACS is one of feasible procedures which could provide enough improvement in resolution, photo-resist profile, DOF, and CD uniformity (CDU). Proximity effect is one of significant topics to evaluate chemical shrink bias of different type contacts. Research of shrink bias of different size and pitch contacts had been investigated broadly in the past. In general, the constant bias of shrinkage for difference pattern sizes was an assumption. However, according to our evaluative results, we had characterized the correlation about the shrink bias versus pattern size. In this paper, we not only show DOF, CDU, shrink bias of RELACS, but also present chemical shrink bias of different size and different pitch contact holes and then we could follow this correlation rule to define general rule for proximity effect correction.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Hsien Hsieh, Wei Hsien Hsieh, Hung Jen Liu, Hung Jen Liu, Wen Bin Wu, Wen Bin Wu, Chiang Lin Shin, Chiang Lin Shin, Jeng Ping Lin, Jeng Ping Lin, } "Proximity effect correction for the chemical shrink process of different type contact holes", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193E (21 March 2007); doi: 10.1117/12.711944; https://doi.org/10.1117/12.711944


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