21 March 2007 Printing of structures less than 0,3 &mgr;m by i-line exposure using resists TDMR-AR80 and TDMR-AR95
Author Affiliations +
Abstract
There is increasing interest in high resolution i-line resists which allow the printing of structures smaller than 0.3&mgr;m. We have evaluated the resists TDMR-AR80 und TDMR-AR95 from TOK Company in order to check their potential concerning minimum line sizes with sufficient process window in regard to focus/exposure process latitude, with our main focus on trench structures. The Bossung Plots of dense lines and semi-dense lines were determined. The resist and etch profiles were characterised both by inline-SEM measurements and cross-sections. The influence of several stepper illumination modes and Off Axis Illumination (OAI) on the focus/exposure process window was investigated. The resists TDMR-AR80 and TDMR-AR95 enable printing of trench structures less than 0.3&mgr;m. For 0.3&mgr;m lines, our specification limit of 0.3&mgr;m +/- 10% was reached within a focus range from - 0.1 to 1.0 microns. OAI illumination mode enlarged the focus window by 20% in comparison to the standard illumination mode. Structures of 0.28&mgr;m and 0.26&mgr;m were printed with a focus window of 0.7&mgr;m which shows the high potential of this resist generation. The implementation of the resist in production provides large amounts of data which enable the calculation of parameters related to process stability (wafer to wafer and lot to lot CD-standard deviation, Cp-, Cpk-values etc.).
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Behrendt, A. Behrendt, T. Dow, T. Dow, K. Stoeflin, K. Stoeflin, } "Printing of structures less than 0,3 &mgr;m by i-line exposure using resists TDMR-AR80 and TDMR-AR95", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193J (21 March 2007); doi: 10.1117/12.710534; https://doi.org/10.1117/12.710534
PROCEEDINGS
8 PAGES


SHARE
Back to Top