22 March 2007 32-nm pattern collapse modeling with radial distance and rinse speed
Author Affiliations +
Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 65193Y (2007); doi: 10.1117/12.712220
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States
Abstract
Chemically amplified resist materials are now available to reach critical dimensions of the pattern close to 32 nm values. Pattern collapse is a very serious problem in fine patterning less than 32 nm critical dimension, because it decreases the yield. The pattern collapse is the pattern response to unbalanced capillary forces acting on the pattern walls during the spinning drying step after development process. Centrifugal force has not considered for pattern collapse modeling up to now, so that pattern collapse due to spinning is studied. In this study we investigate the 32 nm node pattern collapse mechanism with radial distance and rinse speed of dense patterns. In the process of creating the simulation tool, the rotating model is used. As rinse speed and radial distance are increased, critical aspect ratio is decreased. As a result, pattern collapse is increased.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jong-Sun Kim, Wook Chang, Seoung-Wook Park, Hye-Keun Oh, Suk-Joo Lee, Sung-Hyuk Kim, "32-nm pattern collapse modeling with radial distance and rinse speed", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193Y (22 March 2007); doi: 10.1117/12.712220; https://doi.org/10.1117/12.712220
PROCEEDINGS
7 PAGES


SHARE
KEYWORDS
Liquids

Semiconducting wafers

Mathematical modeling

Capillaries

Chemically amplified resists

Electronics

Lithography

Back to Top