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6 April 2007 The rational design of polymeric EUV resist materials by QSPR modelling
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Abstract
We present the initial results of the development of a qualitative structure property relationship (QSPR) model to guide in the design and synthesis of high-sensitivity, non-CAR materials for EUV lithography. The model was developed using the fragmentation data of low molecular weight species at 70 eV using a mass spectrometer (MS) with an electron ionization source as the input parameter. The preliminary model has highlighted a number of structural elements which will be important in the future design of resists, however, limitations with the current set of input data for molecules which fragment readily have been identified and these are currently being addressed. Additionally, a correlation between &ggr; (1 MeV) and EUV (92 eV) radiolysis of selected polymers has been established and it is proposed that the higher energy (1 MeV) irradiation source is a suitable model process for EUV and can, therefore, be used in the future screening of polymeric materials.
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Kevin Jack, Heping Liu, Idriss Blakey, David Hill, Wang Yueh, Heidi Cao, Michael Leeson, Greg Denbeaux, Justin Waterman, and Andrew Whittaker "The rational design of polymeric EUV resist materials by QSPR modelling", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193Z (6 April 2007); https://doi.org/10.1117/12.716213
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