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23 March 2007 Effect of deprotection activation energy on lithographic performance of EUVL resist
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Abstract
As the feature size becomes smaller, it is difficult for the lithography progress to keep pace with the acceleration of design rule shrinkage and high integration of memory device. Extreme Ultra Violet Lithography (EUVL) is a preferred solution for the 32nm node. In this paper, we have synthesized two types of polymers. One is based on hydroxy phenol, the other is based on hydrocarbon acrylate type polymer. We have diversified each polymer type according to different activation energies for deprotection reaction. In this experiment, we have observed on the resist lithographic performance such as resolution, LER (Line Edge Roughness), photo-sensitivity, and out-gassing during exposure. Different properties according to activation energy were well explained by acid diffusion and polymer free-volume.
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Sang-Jeoung Kim, Geun-Jong Yu, Jung-Yeol Lee, Hyun-Jin Kim, Jae-Woo Lee, Deog-Bae Kim, Yool Kang, and Jaehyun Kim "Effect of deprotection activation energy on lithographic performance of EUVL resist", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651947 (23 March 2007); https://doi.org/10.1117/12.711951
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