26 March 2007 Exposure of molecular glass resist by e-beam and EUVIL
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Molecular resist have potential interest for low CDs and LERs required in future lithography technology. The lithographic ability of one of them is exposed in this study, by e-beam and by EUV-IL. Work on process condition is described and leads to dense-lines resolution down to 32.5nm for.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cyril Vannuffel, Cyril Vannuffel, Damien Djian, Damien Djian, Serge Tedesco, Serge Tedesco, Dimitra Niakoula, Dimitra Niakoula, Panagiotis Argitis, Panagiotis Argitis, Veroniki P. Vidali, Veroniki P. Vidali, Elias Couladouros, Elias Couladouros, Harun Solak, Harun Solak, } "Exposure of molecular glass resist by e-beam and EUVIL", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651949 (26 March 2007); doi: 10.1117/12.714263; https://doi.org/10.1117/12.714263

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