26 March 2007 OPC in memory-device patterns using boundary layer model for 3-dimensional mask topographic effect
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Abstract
Boundary Layer Model (BLM) is applied to OPC for typical memory-device patterning processes for 3D mask topographic effect. It is observed that this BLM successfully accounts for the 3D mask effect as reducing OPC model error down to sub-50 nm node. BLM improves OPC-modeling accuracy depending on specific process conditions such as mask type and pattern geometry. Potential limit of BLM, i.e., how accurately BLM could predict the 3D mask effect is also investigated with respect to CD change: BLM also compared with rigorous simulation for various features and a good match is obtained as small as below 0.5 nm. Some practical issue in OPC modeling such as determination of the phase of boundary layer is addressed, which can be critical for prediction of defocus behavior.
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Young-Chang Kim, Young-Chang Kim, Insung Kim, Insung Kim, JeongGeun Park, JeongGeun Park, Sangwook Kim, Sangwook Kim, Sungsoo Suh, Sungsoo Suh, Yongjin Cheon, Yongjin Cheon, Sukjoo Lee, Sukjoo Lee, Junghyeon Lee, Junghyeon Lee, Chang-Jin Kang, Chang-Jin Kang, Jootae Moon, Jootae Moon, Jonathan Cobb, Jonathan Cobb, Sooryong Lee, Sooryong Lee, "OPC in memory-device patterns using boundary layer model for 3-dimensional mask topographic effect", Proc. SPIE 6520, Optical Microlithography XX, 65200T (26 March 2007); doi: 10.1117/12.711832; https://doi.org/10.1117/12.711832
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