Study of iso-dense bias (IDB) sensitivity to laser spectral shape at the 45nm node

Kazuyuki Yoshimochi; Takayuki Uchiyama; Takao Tamura; Thomas Theeuwes; Rudy Peeters; Hans van der Laan; Hans Bakker; Kenji Morisaki; Toshihiro Oga

doi:10.1117/12.711052

26 March 2007 Study of iso-dense bias (IDB) sensitivity to laser spectral shape at the 45nm node

Kazuyuki Yoshimochi, Takayuki Uchiyama, Takao Tamura, Thomas Theeuwes, Rudy Peeters, Hans van der Laan, Hans Bakker, Kenji Morisaki, Toshihiro Oga

Author Affiliations +

Proceedings Volume 6520, Optical Microlithography XX; 652011 (2007) https://doi.org/10.1117/12.711052
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Here we present both simulation and experimental results that show the effect of changes in laser light source bandwidth (E95) on CD Iso-Dense Bias. For the 55nm Technology Node Device, we have shown that E95 stability of less than 0.11pm is required in order to maintain OPE variation to within 2nm. In addition, we also verified another method to adjust for OPE variations that occur when E95 fluctuates. The Contrast Adjustment method is an effective function to adjust for OPE variation due to E95 fluctuation; it has been shown to maintain OPE variation less than 1.5nm. Furthermore, for the 45nm Technology Node Device, we have demonstrated that E95 stability of less than 0.07pm is required to maintain OPE variation to within 1nm. The bandwidth performance of the latest laser light source exhibits E95 stability less than 0.03 pm, thereby showing that the OPE variation due to E95 can be kept to under 1nm.

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Kazuyuki Yoshimochi, Takayuki Uchiyama, Takao Tamura, Thomas Theeuwes, Rudy Peeters, Hans van der Laan, Hans Bakker, Kenji Morisaki, and Toshihiro Oga "Study of iso-dense bias (IDB) sensitivity to laser spectral shape at the 45nm node", Proc. SPIE 6520, Optical Microlithography XX, 652011 (26 March 2007); https://doi.org/10.1117/12.711052

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