Translator Disclaimer
26 March 2007 Immersion defect reduction, part II: the formation mechanism and reduction of patterned defects
Author Affiliations +
Abstract
193-nm immersion lithography is the only choice for the 45-nm logical node at 120-nm half pitch and extendable to 32- and 22-nm nodes. The defect problem is one of the critical issues in immersion technology. In this paper, we provided a methodology to trace the defect source from optical microscope images to its SEM counterparts after exposure. An optimized exposure routing was also proposed to reduce printing defects. The average defect count was reduced from 19.7 to 4.8 ea/wafer.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lin-Hung Shiu, Fu-Jye Liang, Hsing Chang, Chun-Kuang Chen, Li-Jui Chen, Tsai-Sheng Gau, and Burn J. Lin "Immersion defect reduction, part II: the formation mechanism and reduction of patterned defects", Proc. SPIE 6520, Optical Microlithography XX, 652012 (26 March 2007); doi: 10.1117/12.712527; https://doi.org/10.1117/12.712527
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
Back to Top